Fully Funded by Ministry of Education, Govt. of India

शिक्षा मंत्रालय, भारत सरकार द्वारा वित्त पोषित

Dr.Alok Kumar kamal

Dr.Alok Kumar kamal

Designation: Assistant Professor

Department: Electrical / Electronics

Honour: Ph.D. (Indian Institute of Technology Patna)

Area of Interest: Modelling and simulation of nanoscale transistors and memories, steep switching devices, capacitorless DRAM, and device-circuit co-simulation design for neuromorphic applications

Address: C Block , Room No-C106, ABV-IIITM, Morena Link Road, Gwalior-474015 (M.P).

Email: kamal@iiitm.ac.in


Dr. Alok Kumar Kamal is an assistant professor of Electrical and Electronics Engineering at the Atal Bihari Vajpayee - Indian Institute of Information Technology & Management Gwalior. He received his master’s in VLSI design from NIT Hamirpur, Himachal Pradesh in 2013 and his Ph.D. from Indian Institute of Technology Patna, in the area of emerging MOS transistors for neuromorphic applications in 2022. Presently he is exploring, device-circuit co-simulation design for the development of Spiking Neural Networks (SNN). He has published his works in IEEE Transactions (TED, TNANO) and other SCI listed journals.


1. Assistant professor


(26th Dec 2022 to Present)

2. Assistant professor


(Aug 2013 to May 2017)


Teaching Interests: 1) Solid state devices

                                2) Analog electronics

                                3) VLSI Design

                                4) VLSI Technology

Research Interests: 1) Semiconductor device physics

                                2) Design, simulation and modelling of semiconductor devices

                                3) Capacitorless memory

                                4) Device based artificial neuron/synapse

                                5) Neuromorphic hardware

Member of Professional bodies:

  • IEEE Circuits and Systems Society
  • IEEE Electron Device Society

List of Publications:


  1. Abhash Kumar, Bharat Gupta, Jawar Singh, and Alok Kumar Kamal, “An Ultra-Low Energy Charge Trapping Transistor Device with Neuro-Inspired Learning Capabilities,” India Patent No. 202231053176 [Under Review]


  1. A. K. Kamal, N. Kamal, and J. Singh, “A low power L-shaped gate bipolar impact ionization MOSFET based capacitorless one transistor dynamic random access memory cell”, Japanese Journal of Applied Physics 185301 (2021).
  2. A. K. Kamal, and J. Singh, “Fully Planar Impact Ionization (I2)-RAM Cell With High- Performance and Non-destructive Readout”, IEEE Transactions on Electron Devices, vol. 68, No. 9, pp. 4350-4355, (2021).
  3. A. K. Kamal, and J. Singh, “Simulation-Based Ultralow Energy and High-Speed LIF Neuron Using Silicon Bipolar Impact Ionization MOSFET for Spiking Neural Networks”, IEEE Transactions on Electron Devices, vol. 67, No. 6, pp. 2600-2606, (2020).
  4. N. Kamal, A. K. Kamal and J. Singh, “L-Shaped Tunnel Field-Effect Transistor-Based 1T DRAM With Improved Read Current Ratio, Retention Time, and Sense Margin”, IEEE Transactions on Electron Devices, vol. 68, No. 6, pp. 2705-2711, (2021).
  5. A. K. Kamal, A. Thakur and J. Singh, “Emulating Switching from Short-Term to Long-Term Plasticity of Bio-Synapse using Split Gate MOSFET”, IEEE Transactions on Nanotechnology, vol. 21,pp. 449-454, (2022).
  6. A. Kumar, A. K. Kamal, J. Singh and B. Gupta, "Ultra Low Energy Charge Trapping MOSFET with Neuro-Inspired Learning Capabilities," in IEEE Transactions on Nanotechnology, doi: 10.1109/TNANO.2023.3283987.

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